Optical investigation of MBE grown Si-doped AlxGa1-xN as a function of nominal Al mole fraction up to 0.5
| Autor: | McFall, J. L., Hengehold, R. L., Yeo, Y. K., Nostrand, J. E. Van, Saxler, A. W. |
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| Zdroj: | Journal of Crystal Growth; July 2001, Vol. 227 Issue: 1 p458-465, 8p |
| Databáze: | Supplemental Index |
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