Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition

Autor: Kwon, H. Ki, Eiting, C. J., Lambert, D. J., Wong, M. M., Shelton, B. S., Zhu, T. G., Liliental-Weber, Z., Benamura, M., Dupuis, R. D.
Zdroj: Journal of Crystal Growth; 2000, Vol. 221 Issue: 1 p240-245, 6p
Databáze: Supplemental Index