Dislocation generation in GaN heteroepitaxy
Autor: | Wu, X. H., Fini, P., Tarsa, E. J., Heying, B., Keller, S., Mishra, U. K., DenBaars, S. P., Speck, J. S. |
---|---|
Zdroj: | Journal of Crystal Growth; 1998, Vol. 189 Issue: 1 p231-243, 13p |
Databáze: | Supplemental Index |
Externí odkaz: |