Dislocation generation in GaN heteroepitaxy

Autor: Wu, X. H., Fini, P., Tarsa, E. J., Heying, B., Keller, S., Mishra, U. K., DenBaars, S. P., Speck, J. S.
Zdroj: Journal of Crystal Growth; 1998, Vol. 189 Issue: 1 p231-243, 13p
Databáze: Supplemental Index