Crystal growth of GaN at resonance point of nitrogen-ECR plasma

Autor: Inushima, T., Oda, T., Ashino, T., Matsushita, T., Shiraishi, T., Yasaka, S., Ohoya, S.
Zdroj: Journal of Crystal Growth; 1998, Vol. 189 Issue: 1 p354-358, 5p
Databáze: Supplemental Index