| Autor: |
Fancey, S.J., Buller, G.S., Massa, J.S., Walker, A.C., Perrin, S.D., Dann, A.J., Robertson, M.J. |
| Zdroj: |
Journal of Crystal Growth; January 1998, Vol. 183 Issue: 1-2 p269-273, 5p |
| Abstrakt: |
A time-resolved photoluminescence study of strained and unstrained InGaAsP/InP double heterostructures has been performed at low photogenerated carrier densities (i.e. ≤1016cm−3) using a novel high-efficiency germanium photon-counting detector. The photoluminescenee decay times are observed to decrease with increasing strain. Samples grown on substrates with lattice orientation (3 1 1)B are shown to have shorter excess carrier lifetimes than those grown on lattices orientated (0 0 1) or (3 1 1)A. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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