Selective area chemical beam epitaxial regrowth of Si-doped GaAs by using silicon tetraiodide for field effect transistor application

Autor:	Izumi, Shigekazu, Yamamoto, Yoshitsugu, Kunii, Tetsuro, Miyakuni, Shinichi, Hayafuji, Norio, Sato, Kazuhiko, Otsubo, Mutsuyuki
Zdroj:	Journal of Crystal Growth; May 1997, Vol. 175 Issue: 1 p404-410, 7p
Abstrakt:	Selective area regrowth of silicon-doped GaAs has been successfully achieved by chemical beam epitaxy (CBE) on dry etched trench structures. Abrupt doping-interface and excellent doping controllability have also been achieved by using a novel silicon dopant source of silicon tetraiodide (SiI4). Metal-semiconductor field effect transistor (MESFET) and heterostructure field effect transistor (HFET) fabricated in this way with Ni/AuGe/Au alloyed contact contact metals on the Si-doped GaAs regrown layer reveal contact resistances as low as 3 × 10− 7Ω cm2and perfect selectivity there being no polycrystalline growth on the dielectric mask film.
Databáze:	Supplemental Index
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect