| Autor: |
Bastos, P.L., Anders, M.J., Bongers, M.M.G., Hageman, P.R., Giling, L.J. |
| Zdroj: |
Journal of Crystal Growth; January 1997, Vol. 170 Issue: 1-4 p710-714, 5p |
| Abstrakt: |
In this study the low-pressure (20 mbar) organometallic vapour phase epitaxy (LP-OMVPE) of GaInP on nonplanar {001} GaAs substrates has been examined in the 640°C–760°C temperature range. Growth of this alloy on these surfaces can be characterized by low and high temperature regimes. At low temperatures (T< 720°C) the growth rate difference, between the planar and the nonplanar side walls, are large, and faceting features appear along the bottom corners and top edges. At the higher temperatures (T⩾ 720°C) these facets are no longer present and the intra-cavity deposition profile follows the contour of the groove. These results have been compared to computer simulations of surface concentration profiles whereby the inversely proportional relation between temperature and supersaturation, along with varying growth rate on adjacent surfaces of different crystallographic orientations, is found to be the driving force behind the occurrence of these features. The stability of the observed facets is related to the decrease in dangling bond densities upon surface reconstruction. |
| Databáze: |
Supplemental Index |
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