| Autor: |
Nishida, K., Haneda, S., Hara, K., Munekata, H., Kukimoto, H. |
| Zdroj: |
Journal of Crystal Growth; January 1997, Vol. 170 Issue: 1-4 p312-315, 4p |
| Abstrakt: |
GaN epilayers have been grown on (0001) sapphire substrates with a specially designed two-flow horizontal metalorganic vapor phase epitaxy (MOVPE) reactor. Epilayers with flat and smooth surfaces were obtained at the growth temperature of 950°C with relatively low source supply rates. This indicates a relatively high growth efficiency of the reactor. Characterization by photoluminescence, X-ray diffraction and Hall measurements reveal that the epilayers are of reasonably high quality. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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