| Autor: |
Wang, S.Y., Thompson, P.J., Horsburgh, G., Steele, T.A., Brownlie, G.D., Prior, K.A., Cavenett, B.C. |
| Zdroj: |
Journal of Crystal Growth; February 1996, Vol. 159 Issue: 1-4 p459-462, 4p |
| Abstrakt: |
The piezoelectric effect has been demonstrated for the first time in strained ZnSeZnCdSequantum wells grown on (211)B GaAs substrates. A piezoelectric field strength of 1.1 × 105V/cm has been observed in Zn0.8Cd0.2Se quantum wells that have a 1.3% lattice mismatch with the substrate. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
Full Text from ScienceDirect