| Autor: |
Brownlie, G.D., Zhu, Z., Horsburgh, G., Steele, T., Thompson, P.J., Wallace, J.M., Prior, K.A., Cavenett, B.C. |
| Zdroj: |
Journal of Crystal Growth; February 1996, Vol. 159 Issue: 1-4 p321-324, 4p |
| Abstrakt: |
Photoluminescence excitation spectroscopy (PLE) of nitrogen doped ZnSe epilayers is reported here for the first time. The dependence of the PLE spectra on the net acceptor concentration in ZnSe:N and the temperature has been investigated. A new radiative transition at 2.732 eV is revealed in highly doped ZnSe:N, and is attributed to a transition between the valence band and a new donor level with an ionisation energy of 88 meV. The effect of strain on the exciton spectra in undoped and N-doped layers is discussed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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