| Autor: |
Privezentsev, V. Vladimir, Chernykh, Pavel N., Petrov, Dmitrii V. |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; August 2011, Vol. 178 Issue: 1 p217-220, 4p |
| Abstrakt: |
There are investigated the structural properties of 64Zn+ ion-beam induced nano-size voids in as implanted and subsequent furnace annealing SiOSuperscript text2/Si(100) substrates. Then 64Zn+ ions with energy of E=100keV were implanted into SiO2 layer to a fluence of D=2×1014cm-2. After this furnace thermal annealing at temperature 400oC during 1h in neutral (nitrogen) atmosthere was made. It is revealed, that in as-implanted sample the surface is non-uniform and there is some structurization of a SiO2 layer. In this state, metal Zn NPs an order of ten nm in diameter are formed in the depth region around the projected range. There is thus a net flux of Zn out of the nanoparticles (NPs) into an oxide layer closer to the surface. As Zn has a big diffusion constant and a high vaper pressure there are occured out-diffusion of Zn from a SiO2 surface layer. The volume occupied by the Zn NPs becomes a void. It results to formation of cavities, which combining among themselves, form voids. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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