| Autor: |
Schuette, Daniel R., Westhoff, Richard C., Ciampi, Joseph S., Perlin, Gayatri E., Young, Douglas J., Aull, Brian F., Reich, Robert K., Shaver, David C. |
| Zdroj: |
Proceedings of SPIE; May 2011, Vol. 8033 Issue: 1 p80330D-80330D-9, 722980p |
| Abstrakt: |
We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin (< 10 m) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes it possible to build low-dark-count-rate single-photon detectors with high quantum efficiency extending to deep ultraviolet wavelengths. This paper reviews our process for fabricating MBE back-illuminated silicon Geigermode avalanche photodiode arrays and presents characterization of initial test devices. |
| Databáze: |
Supplemental Index |
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