Electrical properties of LaB6/PZT/Ag structure with asymmetric interface charge distribution

Autor: Kafadaryan, Y. A., Aghamalyan, N. R., Petrosyan, S. I., Hovsepyan, R. K., Lazaryan, V. G., Kuzanyan, A. S.
Zdroj: Proceedings of SPIE; October 2010, Vol. 7998 Issue: 1 p79980C-79980C-7, 719828p
Abstrakt: Effect of the bottom electrode (LaB6) on electron emission characteristics (current density, excited voltage), leakage current behavior and polarization-voltage hysteresis of the Ag/PbZr0.52Ti0.48O3/LaB6/Al2O3capacitor has been firstly experimentally investigated by fabricating PbZr 0.52Ti0.48O3(PZT) and LaB6 films with sol-gel and e-beam evaporation techniques respectively. The current-voltage (I-V) and hysteresis (P-E) characteristics show different charge distribution at the top and bottom interfaces. Leakage current behavior as a function of voltage is interpreted by Schottky charge transport mechanism. Electron emission from the PZT surface under low driving pulses <0.4 V has been detected in vacuum chamber with pressure 4x10-5Torr. Current densities in the range of 0-105 A/cm2have been measured in a diode configuration under 10-22 kV/cm excitation voltages and compared with data reported in the literature.
Databáze: Supplemental Index