| Autor: |
Jackson, Warren B., Kim, Han-Jun, Kwon, Ohseung, Yeh, Bao, Hoffman, Randy, Mourey, Devin, Koch, Tim, Taussig, Carl, Elder, Richard, Jeans, Albert |
| Zdroj: |
Proceedings of SPIE; February 2011, Vol. 7956 Issue: 1 p795604-795604-11 |
| Abstrakt: |
A roll-to-roll process is used to fabricate amorphous silicon and amorphous multicomponent oxide (MCO) transistors on flexible substrates using self aligned imprint lithography (SAIL). SAIL solves the layer to layer alignment problem. The imprint lithography patterned MCO transistors had a mobility of 15 cm2V-1sec-1and an on-off ratio of 107. Full display arrays with data, gate, hold capacitors and cross-overs were patterned using SAIL technology. Studies of stability of the MCO transistors indicate the importance of controlling O vacancies in the material particularly the back channel. Devices subjected to -10V gate bias stress at 60C under illumination exhibited behavior consistent with state creation in the upper and lower half of the gap near the back channel interface possibly associated with O vacancy formation. |
| Databáze: |
Supplemental Index |
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