| Autor: |
Miyazawa, Shintaro, Ichikawa, Satoru, Liu, Yuhuai, Ji, Shiyang, Matsuoka, Takashi, Nakae, Hideo |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; May 2011, Vol. 208 Issue: 5 p1195-1198, 4p |
| Abstrakt: |
As a novel substrate with a lattice‐mismatch of only 0.8% along the a‐axis to InN thin films, we propose LaBGeO5(LBGO) with a trigonal symmetry for the first time. A single crystal growth of LBGO by Czochralski (Cz)‐pulling was investigated, and c‐axis‐oriented LBGO single crystals with high crystallinity were successfully grown with a pulling rate of 0.5 mm/h in O2‐atomosphere. c‐axis oriented InN film was subsequently grown on the obtained LBGO {001} substrate by metalorganic vapor epitaxy (MOVPE), and it was verified that InN film on LBGO was less‐strained as compared with that on {001} sapphire substrate. It is stressed to say that LBGO can be expected as a lattice‐matching substrate for the epitaxialgrowth of InN. |
| Databáze: |
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