| Autor: |
Wu, Chia-Song, Chan, Yi-Jen, Tien-Huat Gan, Jia-Lin, Chyi, Jen-Inn |
| Zdroj: |
Journal of the Chinese Institute of Engineers; July 1995, Vol. 18 Issue: 5 p707-712, 6p |
| Abstrakt: |
In0.52Al0.48As/InxGa1-xAs(x=0.53 lattice-matched, and x=0.6 pseudomorphic) high electron mobility transistor (HEMT) structures are grown by a Riber-32P MBE system on (100) InP:Fe substrates. Devices with the gate-length of 0.8μm show excellent channel pinch-off characteristics from the Ids-Vds curves. The saturation current density biased at Vgs=0.5V is 480 mA/mm for HEMTs(x=0.53) and 550 mA/ mm for pseudomorphic-(PHEMTs, x=0.6). A peak extrinsic DC transconductance (gm) increases from 342 mS/mm to 395 mS/mm as the In composition increases from 53% to 60% for In0.52Al0-48As/ InxGa1-xAs HEMTs. Microwave characteristics demonstrate that a current gain cutoff frequency (fT) also increases from 22 GHz to 25 GHz and a maximum oscillation frequency (fmax) increases from 60 GHz to 83 GHz, at 300K. This demonstrates that with the increase of In content in InxGa1-xAs channels, device performance is dramatically enhanced, which can be used for microwave circuit applications. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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