| Autor: |
Karaliunas, Mindaugas, Serevicius, Tomas, Kuokstis, Edmundas, Juršėnas, Saulius, Ting, Shao Ying, Huang, Jeng Jie, Yang, Chih Chung |
| Zdroj: |
Advanced Materials Research; April 2011, Vol. 222 Issue: 1 p86-89, 4p |
| Abstrakt: |
Optical characterization of molecular-beam-epitaxy-grown ZnO and MgZnO epitaxial layers on sapphire (0001) substrates is presented. The parameters such as carrier recombination time and optical gain coefficient are analyzed. Radiative recombination mechanisms of ZnO in dense quasiparticle system are discussed. The ZnO epilayers even with lower structural quality are tolerable for applications in optoelectronics as light emitters. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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