| Autor: |
Kwan, Alex Man Ho, Wong, King Yuen, Liu, Xiaosen, Chen, Kevin J. |
| Zdroj: |
Japanese Journal of Applied Physics; April 2011, Vol. 50 Issue: 4 p04DF02-04DF04, 3p |
| Abstrakt: |
This paper presents the dc and dynamic characterizations of a GaN-based voltage comparator, fabricated with monolithic integration of enhancement-mode (E-mode) and depletion-mode (D-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The comparator features high gain ($>31$ dB) and wide bandwidth ($>4$ MHz), and small propagation delay time ($<20$ ns) over a wide temperature range up to 250 °C. Its dc gain is still 27.1 dB at 400 °C. These results demonstrate the potential of the AlGaN/GaN HEMT technology for mixed-signal integrated circuits used in GaN power electronics that promises high-voltage, high-current, and high-temperature operation. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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