| Autor: |
Lebedev, Sergey P., Petrov, V.N., Kotousova, I.S., Lavrent’ev, A.A., Dement’ev, P.A., Lebedev, Alexander A., Titkov, Alexander N. |
| Zdroj: |
Materials Science Forum; March 2011, Vol. 679 Issue: 1 p437-440, 4p |
| Abstrakt: |
Influence of high-vacuum annealing at temperatures in the range 1300-1400°C and residual pressure of ~10-6 Torr on the surface of 6H-SiC (0001) wafers has been studied. Auger spectroscopy and RHEED data show that the annealing conditions do not lead to any surface reconstruction of the wafers. Atomic force microscopy reveals atomically flat surface terraces separated by steps of unit-cell height (h = 1.5 nm). |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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