| Autor: |
Robert, Teddy, Marinova, Maya, Juillaguet, Sandrine, Henry, Anne, Polychroniadis, Efstathios K., Camassel, Jean |
| Zdroj: |
Materials Science Forum; March 2011, Vol. 679 Issue: 1 p314-317, 4p |
| Abstrakt: |
Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-well coupling effects. |
| Databáze: |
Supplemental Index |
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