| Autor: |
Marinova, Maya, Andreadou, Ariadne, Sun, Jian Wu, Lorenzzi, Jean, Mantzari, Alkyoni, Zoulis, Georgios, Jegenyes, Nikoletta, Juillaguet, Sandrine, Soulière, Veronique, Ferro, Gabriel, Camassel, Jean, Polychroniadis, Efstathios K. |
| Zdroj: |
Materials Science Forum; March 2011, Vol. 679 Issue: 1 p241-244, 4p |
| Abstrakt: |
The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more. |
| Databáze: |
Supplemental Index |
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