| Autor: |
Williams, P.A., Roberts, J.L., Jones, A.C., Chalker, P.R., Tobin, N.L., Bickley, J.F., Davies, H.O., Smith, L.M., Leedham, T.J. |
| Zdroj: |
Chemical Vapor Deposition; July 2002, Vol. 8 Issue: 4 p163-170, 8p |
| Abstrakt: |
Thin films of ZrO2 and HfO2 have been deposited by liquid injection metalorganic (MO)CVD using a range of new alkoxide precursors, [Zr(OtBu)2(mmp)2] (1), [Hf(OtBu)2(mmp)2] (2), [Zr(mmp)4] (3), and [Hf(mmp)4] (4): (mmp = 1-methoxy-2-methyl-2-propanolate, OCMe2CH2OMe). The complexes are mononuclear and volatile, and are significantly less reactive to air and moisture than existing Zr and Hf alkoxide precursors such as [Zr(OtBu)4] and [Hf(OtBu)4]. The ZrO2 and HfO2 films were grown over a wide range of substrate temperatures (350650 °C), and analysis by laser Raman spectroscopy shows that the films were deposited in the thermodynamically stable α- or monoclinic phase. |
| Databáze: |
Supplemental Index |
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