| Autor: |
Mizuno, Tomohisa, Mizoguchi, Naoki, Tanimoto, Kotaro, Yamauchi, Tomoaki, Hasegawa, Mitsuo, Sameshima, Toshiyuki, Tezuka, Tsutomu |
| Zdroj: |
Japanese Journal of Applied Physics; April 2010, Vol. 49 Issue: 4 p04DC13-04DC17, 5p |
| Abstrakt: |
We have studied new abrupt-source-relaxed/strained semiconductor-heterojunction structures for quasi-ballistic complementary metal--oxide--semiconductor (CMOS) devices, by locally controlling the strain of a single strained semiconductor. Appling O+ion implantation recoil energy to the strained semiconductor/buried oxide interface, Raman analysis of the strained layers indicates that we have successfully relaxed both strained-Si-on-insulator (SSOI) substrates for n-MOS and SiGe-on-insulator (SGOI) substrates for p-MOS without polycrystallizing the semiconductor layers, by optimizing O+ion implantation conditions. As a result, it is considered that the source conduction and valence band offsets $\Delta E_{\text{C}}$ and $\Delta E_{\text{V}}$ can be realized by the energy difference in the source Si/channel-strained Si and the source-relaxed SiGe/channel-strained SiGe layers, respectively. The device simulator, considering the tunneling effects at the source heterojunction, shows that the transconductance of sub-10 nm source heterojunction MOS transistors (SHOT) continues to increase with increasing $\Delta E_{\text{C}}$. Therefore, SHOT structures with the novel source heterojunction are very promising for future quasi-ballistic CMOS devices. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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