| Autor: |
Ohashi, Yoshi, Tajima, Nobuo, Xu, Yonghua, Kada, Takeshi, Nagano, Shuji, Shimizu, Hideharu, Hasaka, Satoshi |
| Zdroj: |
Japanese Journal of Applied Physics; May 2010, Vol. 49 Issue: 5 p05FF03-05FF05, 3p |
| Abstrakt: |
We propose new precursors for bulk low-$k$ films with plasma damage resistance. Our newly designed precursors contain long-chain hydrocarbon groups such as i-butyl and n-propyl groups. Using these precursors, we successfully produced films containing Si--CH2--Si groups by plasma-enhanced chemical vapor deposition (PECVD). The plasma damage resistance of these films under NH3plasma treatment was studied. It was found that the increase in the $k$-value ($\Delta k$) is smaller in films with more Si--CH2--Si groups. |
| Databáze: |
Supplemental Index |
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