| Autor: |
Shimizu, Hideharu, Tajima, Nobuo, Kada, Takeshi, Nagano, Shuji, Ohashi, Yoshi, Hasaka, Satoshi |
| Zdroj: |
Japanese Journal of Applied Physics; May 2010, Vol. 49 Issue: 5 p05FF02-05FF05, 4p |
| Abstrakt: |
SiCH films are a potentially very useful low-$k$ cap layer for covering Cu trenches in ultralarge-scale integration (ULSI) devices. To induce Si--C2H4--Si networks in SiCH film structures, 1,1-divinyl silacyclopentane (DVScP) and 5-silaspiro-[4,4]-nonane (SSN) were designed and prepared. Isobutyl trimethyl silane (iBTMS) and diisobutyl dimethyl silane (DiBDMS) were also designed to form Si--CH2--Si networks in the SiCH molecular structure. SiCH films were formed by plasma-enhanced chemical vapor deposition (PECVD), for use as a low-$k$ cap layer and a Cu diffusion barrier on top of the Cu trenches. We demonstrated additional Si--C2H4--Si networks that can effectively suppress Cu diffusion in SiCH low-$k$ barrier films with a reduced $k$-value of 3.1. |
| Databáze: |
Supplemental Index |
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