Quality Control and Electrical Properties of Thin Amorphous (SiC)1-x(AlN)x Films Produced by Radio Frequency Dual Magnetron Sputtering

Autor: Gálvez de la Puente, G., Erlenbach, Oliver, Guerra, Jorge Andres, Hupfer, T., Steidl, M., De Zela, Francisco, Weingärtner, Roland, Winnacker, Albrecht
Zdroj: Materials Science Forum; April 2010, Vol. 645 Issue: 1 p1199-1202, 4p
Abstrakt: Amorphous pseudobinary (SiC)1 x(AlN)x thin films have been produced by radio frequency dual magnetron sputtering from bulk SiC and AlN targets. For each target the emission characteristic, i.e. the spatial variation of the deposition rate was determined, in order to predict thickness distribution and spatial composition variation for the (SiC) (AlN) alloy. Impedance spectroscopy shows a high resistivity of the films in the SiC rich region, decreasing significantly towards the AlN rich region.
Databáze: Supplemental Index