| Autor: |
Matocha, Kevin, Losee, Peter A., Gowda, Arun, Delgado, Eladio, Dunne, Greg, Beaupre, Richard, Stevanovic, Ljubisa |
| Zdroj: |
Materials Science Forum; April 2010, Vol. 645 Issue: 1 p1123-1126, 4p |
| Abstrakt: |
We address the two critical challenges that currently limit the applicability of SiC MOSFETs in commercial power conversion systems: high-temperature gate oxide reliability and high total current rating. We demonstrate SiC MOSFETs with predicted gate oxide reliability of >106 hours (100 years) operating at a gate oxide electric field of 4 MV/cm at 250C. To scale to high total currents, we develop the Power Overlay planar packaging technique to demonstrate SiC MOSFET power modules with total on-resistance as low as 7.5 m. We scale single die SiC MOSFETs to high currents, demonstrating a large area SiC MOSFET (4.5mm x 4.5 mm) with a total on-resistance of 30 m, specific on-resistance of 5 m-cm2 and blocking voltage of 1400V. |
| Databáze: |
Supplemental Index |
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