| Autor: |
Sankin, Vladimir I., Averkiev, Nikita S., Monakhov, Andrey M., Shkrebiy, Pavel P., Lepneva, Alla A., Ostroumov, Andrey G., Abramov, Pavel L., Bogdanova, Elena V., Lebedev, Sergey P., Strelchuk, Anatoliy M. |
| Zdroj: |
Materials Science Forum; April 2010, Vol. 645 Issue: 1 p451-454, 4p |
| Abstrakt: |
In this work, we have studied I-V characteristics of Al breakdown in 6H-, 4H- and 15R-SiC in electrical field. As a result there obtained the next original data: 1) decreasing dependence of breakdown field due to the concentration increase in the range of Na – Nd = 5x1017–1019 cm-3; 2) absence of low temperature breakdown when Na - Nd< 1017 cm-3; 3) increasing of breakdown field while temperature declines from 77K to 4.2K; 4) at 300K the breakdown field decreases and the breakdown takes place in samples with the absence of low temperature breakdown; 5) gigantic enhancement of breakdown field at F||C. 6) the theoretical analysis based on the theory of a zero radius potential supports the probability of breakdown field enhancement at F||C. |
| Databáze: |
Supplemental Index |
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