| Autor: |
Manolis, Georgios, Zoulis, Georgios, Juillaguet, Sandrine, Lorenzzi, Jean, Ferro, Gabriel, Camassel, Jean, Jarašiūnas, Kestutis |
| Zdroj: |
Materials Science Forum; April 2010, Vol. 645 Issue: 1 p443-446, 4p |
| Abstrakt: |
Thin 3C-SiC(111) epilayers grown on 6H-SiC(0001) substrate by VLS and CVD procedures were studied by low temperature photoluminescence (LTPL) and nonlinear optical techniques at room and low temperatures. Free carrier density ((0.3-7)×1017 cm-3) and nitrogen concentration (4×1016 cm-3) in the layers were determined from Raman and LTPL data. Investigation of non-equilibrium carrier dynamics by using transient grating and free carrier absorption techniques provided an ambipolar diffusion coefficient Da (~2.5 cm2/s) and carrier lifetime τR (2-4 ns) values at room temperature. The temperature dependences of Da and τR in 40-300 K range revealed the scattering processes in high density plasma as well the impact of defects. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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