6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers

Autor: Robert, Teddy, Marinova, Maya, Juillaguet, Sandrine, Henry, Anne, Polychroniadis, Efstathios K., Camassel, Jean
Zdroj: Materials Science Forum; April 2010, Vol. 645 Issue: 1 p347-350, 4p
Abstrakt: A new type of 6H zigzag faults has been identified from high resolution transmission electron microscopy (HRTEM) measurements performed on low-doped 4H-SiC homoepitaxial layer grown on off-axis substrates in a hot-wall CVD reactor. They are made of half unit cells of 6H with corresponding low temperature photoluminescence (LTPL) response ranging from about 3 eV to 2.5 eV at liquid helium temperature.
Databáze: Supplemental Index