The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode

Autor: Huguenin-Love, James, Lauer, Noel T., Soukup, Rodney J., Ianno, Ned J., Kment, Štepan, Hubička, Zdenek
Zdroj: Materials Science Forum; April 2010, Vol. 645 Issue: 1 p131-134, 4p
Abstrakt: Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.
Databáze: Supplemental Index