The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode
Autor: | Huguenin-Love, James, Lauer, Noel T., Soukup, Rodney J., Ianno, Ned J., Kment, Štepan, Hubička, Zdenek |
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Zdroj: | Materials Science Forum; April 2010, Vol. 645 Issue: 1 p131-134, 4p |
Abstrakt: | Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering. |
Databáze: | Supplemental Index |
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