| Autor: |
Fausett, Bryan, Granger, Michael C., Hupert, Mateusz L., Wang, Jian, Swain, Greg M., Gruen, Dieter M. |
| Zdroj: |
Electroanalysis; January 2000, Vol. 12 Issue: 1 p7-15, 9p |
| Abstrakt: |
Nanocrystalline diamond thin‐films have been synthesized in CH4/Ar (argon) and CH4/N2gas mixtures without the addition of molecular hydrogen. Atomic force microscopy analysis demonstrates that the C60/Ar films consist of hemispherical features about 150 nm in diameter with a height of 20 nm. The mean roughness over a 2×2 µm2area, based on feature height analysis, is 50±8 nm. The voltammetric response of these films in the presence of Fe(CN)6–3/–4, Ru(NH3)6+2/+3, methyl viologen and 4‐tert‐butylcatechol is similar to that expected for high quality microcrystalline diamond. The results indicate that the nanocrystalline films are active without any conventional pretreatment, and possess semimetallic electronic properties over a potential range from 0.5 to –1.5 V (vs. SCE). Nanocrystalline diamond thin‐films produced from CH4/N2mixtures are rougher than the C60/Ar films, and possess electrochemical properties more closely resembling glassy carbon. The charge carrier concentration in both types of films is believed to result mainly from the sp2carbon in the grain boundaries. |
| Databáze: |
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