| Autor: |
Kim, T.W., Lee, D.U., Lim, Y.S., Lee, J.Y., Park, H.L. |
| Zdroj: |
Solid State Communications; April 1998, Vol. 106 Issue: 3 p153-156, 4p |
| Abstrakt: |
Transmission electron microscopy (TEM) measurements were performed to investigate the role and mechanism of a ZnTe buffer layer on the highquality structural properties for strained CdxZn1−xTe/ZnTe double quantum wells. The bright-field TEM image near the ZnTe/GaAs interface showed the Moirépatterns, indicative of initial island growth and of a difference in the growth directions between the islands. The high-resolution TEM image indicated that the difference in the growth directions originated from the formation of the plane defects, such as a sub-grain boundary. When a 1-µm ZnTe buffer layer was grown on the GaAs substrate, the ZnTe buffer layer could be used as a defect-free substrate, as shown by the thickness fringes observed from the TEM image. The formation mechanism for the thickness fringes in the ZnTe buffer layer between the CdxZn1−xTe/ZnTe double quantum well and the GaAs substrate is discussed. The results indicate that the ZnTe buffer layer plays an important role for strained CdxZn1−xTe/ZnTe double quantum wells grown on GaAs substrates by eliminating the defects due to the lattice mismatch. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
Full Text from ScienceDirect