| Autor: |
Bulaev, P.V., Marmalyuk, A.A., Padalitsa, A.A., Nikitin, D.B., Petrovskii, A.V., Zalevskii, I.D., Konyaev, V.P., Os'kin, V.V., Zverkov, M.V., Simakov, V.A., Zverev, G.M. |
| Zdroj: |
Quantum Electronics; May 20, 2002, Vol. 32 Issue: 3 p213-215, 3p |
| Abstrakt: |
Heterostructure lasers with a separate electronic and optical confinement based on strained quantum-well structures with single and double InGaAs quantum wells and different waveguide parameters are studied. The heterostructure design and technological conditions of the quantum-well growth are optimised to increase the output power and reduce the laser emission divergence. Semiconductor lasers are fabricated with a cw output power as high as 4 W and the emission divergence of less than 30° in the plane perpendicular to the p n junction plane. The pulsed output power of these lasers is limited by the catastrophycal damage of mirrors at a linear power density of 3000 W cm-1. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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