| Autor: |
Parfenova, I., Reshanov, S., Rastegaev, V. |
| Zdroj: |
Inorganic Materials; May 2002, Vol. 38 Issue: 5 p476-481, 6p |
| Abstrakt: |
The atomic displacements and the chemical and deformation contributions to the change in the bond energy of Group III–V substitutional impurities in β-SiC were calculated by Harrison's bonding-orbital method. The results were used to determine the lattice parameter as a function of doping level and the solubility of impurities in SiC under both equilibrium and nonequilibrium conditions on different growth surfaces. The calculation results agree well with experimental data. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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