| Autor: |
Gross, Todd S, Soucy, Kevin G, Andideh, Ebrahim, Chamberlin, Kent |
| Zdroj: |
Journal of Physics D: Applied Physics; April 7, 2002, Vol. 35 Issue: 7 p723-728, 6p |
| Abstrakt: |
Electrostatic force microscopy was used to detect nanoscale dielectric constant variations in two different, carbon-doped oxide low-k dielectrics deposited by plasma-enhanced chemical vapour deposition and subjected to oxidizing isotropic plasmas and inert gas isotropic plasmas. Samples were polished at 10\r{} to the sample normal to enhance the through-the-thickness spatial resolution. We observed that the technique was able to detect k{}~{}0.1 variations of dielectric constant with ~10 nm spatial resolution. We also observed that the oxidizing isotropic plasma caused damage to a depth of approximately 10-50 nm and that one of the carbon-doped oxides was more susceptible to plasma-induced damage. The estimated increase of dielectric constant from the oxidizing plasma was from k~2.5-3 to k>4-5. The damage from the inert gas plasma was observed to be deeper but less severe. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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