| Autor: |
Fassbender, J., Poppe, S., Mewes, T., Mougin, A., Hillebrands, B., Engel, D., Jung, M., Ehresmann, A., Schmoranzer, H., Faini, G., Kirk, K.J., Chapman, J.N. |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; February 2002, Vol. 189 Issue: 2 p439-447, 9p |
| Abstrakt: |
He+ ion irradiation is an excellent tool to modify the magnitude and direction of the exchange bias field on the sub-micrometer scale without affecting the sample topography. This effect has been utilized to magnetically pattern NiFe/FeMn exchange bias double layers using resist masks patterned by electron beam lithography. Ion irradiation through the masks leads to a local modification of the magnetization reversal behavior and allows to study the magnetization reversal as a function of the exchange bias field strength and the pattern dimensions on a single sample. Results are presented on the macroscopic and microscopic magnetization reversal using the magneto-optic Kerr effect and Lorentz microscopy. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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