| Autor: |
Tennant, D. M., Fetter, L. A., Harriott, L. R., MacDowell, A. A., Mulgrew, P. P., Pastalan, J. Z., Waskiewicz, W. K., Windt, D. L., Wood, O. R. |
| Zdroj: |
Applied Optics; December 1993, Vol. 32 Issue: 34 p7007-7011, 5p |
| Abstrakt: |
We describe a variety of technologies for patterning transmissive and reflective soft x-ray projection lithography masks containing features as small as 0.1 μm. The transmission masks fabricated for use at 13 nm are of one type, a Ge-absorbing layer patterned on a boron-doped Si membrane. Reflective masks were patterned by various methods that included absorbing layers formed on top of multilayer reflectors, multilayer-reflector-coating removal by reactive ion etching, and ion damage of multilayer regions by ion implantation. For the first time, we believe, a process for absorber repair that does not significantly damage the reflectance of the multilayer coating on the reflection mask is demonstrated. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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