Gettering Mechanism of Cu in Silicon Calculated from First Principles

Autor: Matsukawa, Kazuhito, Hattori, Nobusuke, Maegawa, Shigeto, Shirai, Koun, Katayama-Yoshida, Hiroshi
Zdroj: Diffusion and Defect Data Part B: Solid State Phenomena; December 2005, Vol. 108 Issue: 1 p115-124, 10p
Abstrakt: The binding energy between 3d transition metals (TM) such as iron (Fe), nickel (Ni) and copper (Cu), and boron (B) in Si are studied using first-principles molecular dynamics method. The binding energies of between each TM for Fe, Ni, Cu and B are 0.64,0.57,and 0.44eV respectively, and the binding energy of Fe and B is the largest, on the other hand, binding energy of Ni and B is the smallest. This result is well in agreement with the experiment fact that Fe and Cu exist as a positive charge in P+ silicon, so it is easy to combine with the B, which has a negative charge, on the other hand, Ni exists in the state of neutrality electrically in P+ silicon, so it can not combine with B atom.
Databáze: Supplemental Index