| Autor: |
Amhouche, Y., Rais, K. |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; December 2005, Vol. 108 Issue: 1 p45-52, 8p |
| Abstrakt: |
The aim of this work is to study the physical obstacles introduced by the use of high-k MOSFETs structures and discuss basic problems associated with high-k candidates currently investigated such as low carrier mobility and parasitic interfacial layers and to present other ways to reduce the undesirable secondary effects when one replaces silicon with a high dielectric oxyde (high-k). We will show that use of the nitride allows reducing the effects of the interfacial layers with an acceptable reduction rate of mobility. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
