Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers
| Autor: | Sueoka, Koji, Akatsuka, M., Yonemura, Mitsuharu, Ono, T., Asayama, Eiichi, Koike, Y., Sadamitsu, S. |
|---|---|
| Zdroj: | Diffusion and Defect Data Part B: Solid State Phenomena; November 2001, Vol. 82 Issue: 1 p49-56, 8p |
| Abstrakt: | Not Available |
| Databáze: | Supplemental Index |
| Externí odkaz: |
|