| Autor: |
Beckhoff, Burkhard, Nutsch, Andreas, Altmann, Roswitha, Borionetti, G., Pello, C., Polignano, Maria Luisa, Codegoni, Davide, Grasso, Salvo, Cazzini, Elena, Bersani, M., Lazzeri, P., Gennaro, S., Kolbe, Michael, Müller, Matthias, Kregsamer, P., Posch, Florian |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; January 2009, Vol. 145 Issue: 1 p101-104, 4p |
| Abstrakt: |
As the detection of inorganic contaminants is of steadily increasing importance for the improvement of yields in microelectronic applications, the aim of one of the joint research activity within the European Integrated Activity of Excellence and Networking for Nano- and Micro-Electronics Analysis (ANNA, site: www.ANNA-i3.org) is the development and assessment of new methodolo¬gies and metrologies for the detection of low concentration inorganic contaminants in silicon and in novel materials. A main objective consist in the benchmarking of various analytical techniques avail¬able in the laboratories of the participating ANNA partners, including the improvement of the res¬pective detection limits as well as the quantitation reliablity of selected analytical techniques such as total-reflection x-ray fluorescence (TXRF) analysis. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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