| Autor: |
Lee, Seung Cheol, Ryu, Choon Kun, Park, Sang Wook, Jin, Gyu An, Kim, Sang Deok, Yang, Ki Hong, Kwak, Sang Hyon, Lim, Su Hyun, Kim, Young Jun, Park, Sun Mi, Jang, Chul Sik, Park, Sung Ki |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; November 2007, Vol. 134 Issue: 1 p57-60, 4p |
| Abstrakt: |
The SC-1 treatment prior to the O3/TEOS CVD was a very effective method for gapfilling the nanoscale trench of the high aspect ratio by improving the adsorption of TEOS precursors onto the wall oxide. It was found that the interval duration after the SC-1 cleaning was a critical parameter for the contact angle and the gapfill performance of the O3/TEOS CVD. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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