| Autor: |
Abrosimov, N.V., Nötzel, N., Riemann, H., Irmscher, K., Pavlov, Sergeij G., Hübers, Heinz Wilhelm, Böttger, Ute, Haas, Philippe M., Drichko, N., Dressel, M. |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; October 2007, Vol. 131 Issue: 1 p589-594, 6p |
| Abstrakt: |
Silicon crystals, doped with moderate concentration of magnesium or lithium, have been grown for application as optically pumped donor silicon lasers for the terahertz spectral region. The pedestal growth technique accompanied with axial-loaded dopant pills enabled manufacturing of large silicon crystals with a homogeneous donor distribution in the range from 1014 to 1016 cm-3, as required for intracenter silicon lasers. Terahertz-range photoluminescence from the grown crystals has been observed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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