Hydrogen-Enhanced Transformation of Eletrical and Structural Properties of Thin Subsurface Ion Implanted Silicon Layer in SiO2-Si Systems

Autor: Terukov, E.I., Ber, B.J., Kudojarova, V.Kh., Davydov, V.Ju., Nazarov, A.N., Vovk, Ja.N., Ashok, S.
Zdroj: Diffusion and Defect Data Part B: Solid State Phenomena; August 1999, Vol. 69 Issue: 1 p595
Abstrakt: Not Available
Databáze: Supplemental Index