| Autor: |
Ivanov, Pavel A., Potapov, Alexander S., Samsonova, Tat'yana P. |
| Zdroj: |
Materials Science Forum; March 2009, Vol. 615 Issue: 1 p431-434, 4p |
| Abstrakt: |
Forward current-voltage characteristics of non-ideal Ti / 4H-SiC Schottky barriers with ideality factor n = 1.1 - 1.2 have been analyzed. The non-ideality is considered as a result of formation of a thin intermediate dielectric layer between the deposited titanium layer and 4H-SiC. Using experimental current-voltage characteristics, the electro-physical characteristics of Ti contacts such as the energy barrier height, the thickness of the intermediate layer and the energy distribution of the interface trap density are determined. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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