| Autor: |
Berkman, Elif, Leonard, R.T., Paisley, Michael J., Khlebnikov, Y., O'Loughlin, Michael J., Burk, Al A., Powell, Adrian R., Malta, D.P., Deyneka, E., Brady, M.F., Khlebnikov, I., Tsvetkov, Valeri F., Hobgood, H.McD., Sumakeris, Joseph J., Basceri, C., Balakrishna, Vijay, Carter Jr., Calvin H., Balkas, C. |
| Zdroj: |
Materials Science Forum; March 2009, Vol. 615 Issue: 1 p3-6, 4p |
| Abstrakt: |
Availability of high-quality, large diameter SiC wafers in quantity has bolstered the commercial application of and interest in both SiC- and nitride-based device technologies. Successful development of SiC devices requires low defect densities, which have been achieved only through significant advances in substrate and epitaxial layer quality. Cree has established viable materials technologies to attain these qualities on production wafers and further developments are imminent. Zero micropipe (ZMP) 100 mm 4HN-SiC substrates are commercially available and 1c dislocations densities were reduced to values as low as 175 cm-2. On these low defect substrates we have achieved repeatable production of thick epitaxial layers with defect densities of less than 1 cm-2 and as low as 0.2 cm-2. These accomplishments rely on precise monitoring of both material and manufacturing induced defects. Selective etch techniques and an optical surface analyzer is used to inspect these defects on our wafers. Results were verified by optical microscopy and x-ray topography. |
| Databáze: |
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