| Autor: |
Yamashita, Kenya, Egashira, Kyoko, Hashimoto, Koichi, Takahashi, Kunimasa, Kusumoto, Osamu, Utsunomiya, Kazuya, Hayashi, Masashi, Uchida, Masao, Kudo, Chiaki, Kitabatake, Makoto, Hashimoto, Shin |
| Zdroj: |
Materials Science Forum; September 2008, Vol. 600 Issue: 1 p1115-1118, 4p |
| Abstrakt: |
In order for SiC-MOSFET to be practical in various power electronics applications, low specific on-resistance Ron,sp, high breakdown voltage and “normally-off” characteristics have to be fulfilled even at high temperature. We fabricated a SiC-MOSFET employing a submicron gate with channel length Lg of 0.5μm by a self-aligned implantation and aδ-doped epitaxial channel layer to successfully demonstrate the following features. The normally-off characteristics was confirmed from room temperature to 200°C where the therethold voltages Vth were 2.9V at room temperature and 1.6V at 200°C, respectively. The Ron,sp were 4.6mΩcm2 at room temperature and 9.2mΩcm2 at 200°C, respectively, while the breakdown voltage was greater than 1400V . |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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