| Autor: |
Wright, Nicolas G., Johnson, C.M., Horsfall, A.B., Buttay, Cyril, Vassilevski, Konstantin V., Loh, W.S., Skuriat, R., Agyakwa, P. |
| Zdroj: |
Materials Science Forum; September 2008, Vol. 600 Issue: 1 p919-924, 6p |
| Abstrakt: |
The adoption of SiC devices as a viable technology depends crucially on maximising the potential advantages of the material. This is best achieved by the adoption of co-design techniques in which the optimisation of the SiC device is performed in parallel to that of the package and the overall application. This paper considers suitable techniques for this co-design and describes new approaches to the development of SiC technology for practical applications. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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