| Autor: |
Lebedev, A.A., Abramov, P.L., Agrinskaya, Nina V., Kozub, Ven I., Kuznetsov, Alexey N., Lebedev, S.P., Oganesyan, Gagik A., Sorokin, L.M., Chernyaev, A.V., Shamshur, D.V. |
| Zdroj: |
Materials Science Forum; September 2008, Vol. 600 Issue: 1 p541-544, 4p |
| Abstrakt: |
3C-SiC epitaxial layers were grown by method of sublimation epitaxy in vacuum on 6HSiC substrates. It was done investigation of magneto resistance and Hall effect of 3C-SiC/6H-SiC heterostructures in temperature range 1,4 – 300 К. At helium temperatures it was founded low samples resistance and negative magneto-resistance in week magnetic field ( ~ 1 T). Analysis of obtained results shows, that low samples resistance can be connected with metal-isolation junction in 3C-SiC epitaxial films.. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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